Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 36(2); 2003
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2003;36(2):135-140. Published online: Nov, 30, -0001

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A TEM Study on Growth Characteristics of GaN on Si(111) Substrate using MOCVD

  • 신희연;정성훈;유지범;서수정;양철웅;
    성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;
Abstract

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essent

Keywords Gallium nitride (GaN);Aluminum nitride (AlN);Metalorganic chemical vapor deposition (MOCVD);Semiconductor;Transmission electron microscopy (TEM);