Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 36(2); 2003
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2003;36(2):141-147. Published online: Nov, 30, -0001

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A Study on the Low Temperature Growth of SiC Film with a 1,3-DSB Precursor

  • 양재웅;노대호;윤진국;김재수;
    대진대학교 신소재공학과;한국과학기술연구원;한국과학기술연구원;한국과학기술연구원;
Abstract

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{circ}C$ lower than ordinary temperature ($100

Keywords SiC;CVD;precursor;